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| Advance Technical Information High Voltage IGBT IXGH24N170 IXGT24N170 VCES = IC25 = VCE(sat) tfi(typ) = TO-247 (IXGH) 1700V 50A 3.3V 250ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TC = 25C to 150C TJ = 25C to 150C, RGE = 1M Continuous Transient TC = 25C TC = 90C TC = 25C, 1ms VGE = 15V, TVJ = 125C, RG = 5 Clamped inductive load VGE = 15V, TVJ = 125C, VCE = 1000V RG = 5, non repetitive TC = 25C Maximum Ratings 1700 1700 20 30 50 24 150 ICM = 50 @ 0.8 * VCES 10 s V V V V A A A A G = Gate E = Emitter Features 250 -55 ... +150 150 -55 ... +150 W C C C C C Nm/lb.in. g g International standard packages JEDEC TO-268 and JEDEC TO-247 AD High current handling capability MOS Gate turn-on - drive simplicity Rugged NPT structure Molding epoxies meet UL 94 V-0 flammability classification Applications Capacitor discharge & pulser circuits AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies Advantages High power density Suitable for surface mounting Easy to mount with 1 screw, (isolated mounting screw hole) G E C (TAB) C = Collector TAB = Collector TO-268 (IXGT) G C C (TAB) E 1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds Mounting torque (TO-247) TO-247 TO-268 300 260 1.13/10 6 4 Symbol Test Conditions (TJ = 25C unless otherwise specified) BVCES VGE(th) ICES IGES VCE(sat) IC = 250A, VGE = 0V IC = 250A, VCE = VGE VCE = 0.8 * VCES VGE = 0V VCE = 0V, VGE = 20V IC = IC90, VGE = 15V, Note 1 TJ = 125C TJ = 125C Characteristic Values Min. Typ. Max. 1700 3.0 5.0 50 500 100 2.5 3.0 3.3 V V A A nA V (c) 2008 IXYS CORPORATION, All rights reserved DS98994A(09/08) IXGH24N170 IXGT24N170 Symbol Test Conditions (TJ = 25C unless otherwise specified) gfs IC(ON) Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCS (TO-247) 0.25 Inductive load, TJ = 25C IC = IC25, VGE = 15V VCE = 0.8 * VCES, RG = Roff = 5 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC25, VGE = 15V VCE = 0.8 * VCES, RG = Roff = 5 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG IC = IC90, VGE = 15V, VCE = 0.5 * VCES VCE = 25V, VGE = 0V, f = 1MHz IC = IC90, VCE = 10V, Note 1 VCE = 10V, VGE = 10V Characteristic Values Min. Typ. Max. 18 25 100 2400 120 33 106 18 32 42 39 200 250 8 50 55 2.0 200 360 12 0.50 400 500 12 S A pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ C/W C/W TO-247 AD Outline 1 2 3 Terminals: 1 - Gate 2 - Drain Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 TO-268 Outline Note 1: Pulse test, t 300s, duty cycle, d 2%. Min Recommended Footprint Terminals: 1 - Gate 2 - Drain ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 |
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